Soft Recovery Process of Mechanically Degraded Flexible A-Igzo TFTs with Various Rolling Stresses and Defect Simulation Using TCAD Simulation
IEEE transactions on electron devices/IEEE transactions on electron devices（2020）
Key words
Device reliability,field effect transistors,oxide semiconductor,rolling stress,stress,technology computer-aided design (TCAD) simulation,thin-film transistors (TFTs)
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