High-Power Mid-Infrared Quantum Cascade Semiconductor Lasers
2019 IEEE Photonics Conference (IPC)（2019）
Key words
quantum cascade semiconductor,QCLs,intersubband transitions,conduction-band energy states,multiquantum-well structures,carrier tunneling,adjacent MQW stages,coherent-light emission,interband-transition semiconductor lasers,Auger recombination,mid-infrared wavelength range,room temperature,CW power,high-power mid-infrared quantum cascade semiconductor lasers,voltage 10.0 V,power 1.0 W,wavelength 3.0 mum to 20.0 mum,temperature 293.0 K to 298.0 K
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