Modeling the Impact of the High-Field Region on the $C-V$ Characteristics in GaN HEMTs
IEEE Transactions on Electron Devices（2019）
Key words
Logic gates,Gallium nitride,HEMTs,MODFETs,Mathematical model,Capacitance,Electrodes,2-D electron gas (2-DEG),carrier velocity saturation,channel length modulation (CLM),compact model,GaN HEMT,gate charge,TCAD
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