Synchrotron X-Ray Topography Observation and Classification of Dislocations in $\Beta$-Ga2o3 Single Crystal Substrates Grown by EFG
2019 Compound Semiconductor Week (CSW)（2019）
Japan Fine Ceram Ctr
Abstract
Dislocations in EFG-grown β-Ga 2 O 3 substrates have been studied in details by using synchrotron X-ray topography (XRT), chemical etching and transmission electron microscopy. Focus has been placed on accurate detection and classification of dislocations over a large sample area by their burgers vectors. By analyzing XRT contrast change of a same dislocation observed under varying diffraction conditions in terms of g-vector, burgers vector of the dislocation can be deduced. In this way, types of dislocations and their distribution over a large sample area were obtained. In addition, chemical etching and TEM were applied to study the structural properties of dislocations of interest in details.
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Key words
dislocation,chemical etching,burgers vector,XRT contrast change,synchrotron X-ray topography,EFG-grown β-Ga2O3 substrates,β-Ga2O3 single crystal substrates,transmission electron microscopy,g-vector,Ga2O3
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