Technology Challenges and Enablers to Extend Cu Metallization to Beyond 7 Nm Node
2019 Symposium on VLSI Technology（2019）
关键词
Cu interconnects,pure Co metal interconnects,lower line resistance,PVD-reflow Cu seed,EM reliability,dual damascene line-end vias,Cu metallization,PVD-reflowed through-Co self-forming,Cu EM lifetime,pitch dimensions,BEOL,Cu
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