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Fin Bending Mitigation and Local Layout Effect Alleviation in Advanced FinFET Technology Through Material Engineering and Metrology Optimization

T. Y. Wen,B. Colombeau,C. Li,S. Y. Liu,B. N. Guo,H. Meer,M. Hou,B. Yang,H. C. Feng,C. F. Hsu,C. C. Huang,Y. T. Tasi, H. P. Chen,S. A. Huang,C. W. Huang,C. H. Chen,J. C. Lin,K. H. Shim,J. Kuo,S. Lee,L. Holcman,K. Nafisr,J. Fernandez,D. Fung,N. H. Yang,J. Y. Wu,G. C. Hung

2019 Symposium on VLSI Technology（2019）

引用 11|浏览8
关键词
fin bending mitigation,local layout effect,advanced FinFET technology,material engineering,metrology optimization,advanced FinFET devices,STI gap fill,fin defects,device performance degradations,LLE,Flowable CVD films,ion beam treatment,hot Helium implantation,nFET device,bending improvement,UV treatment,in-line e-beam metrology capabilities,FCVD films,hot helium implantation,PROVision,critical dimensions,massive measurements,drive current gain,ILD stress optimization
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