Demonstration of 4H-Sic JFET Digital ICs Across 1000°C Temperature Range Without Change to Input Voltages
Materials Science Forum（2019）
NASA Glenn Research Center
Abstract
Operational testing of prototopye 4H-SiC JFET ICs across an unrivaled ambient temperature span in excess of 1000 °C, from-190 °C to +812 °C, has been demonstrated without any change/adjustment of input signal levels or power supply voltages. This unique ability is expected to simplify infusion of this IC technology into a broader range of beneficial applications.
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High-Temperature Electronics
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