Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN FilmN. A. Sobolev,V. I. Sakharov,I. T. Serenkov,A. D. Bondarev,K. V. Karabeshkin,E. V. Fomin,A. E. Kalyadin,V. M. Mikoushkin,E. I. Shek,E. V. SherstnevSemiconductors（2019）引用 1|浏览25AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
