Plasma Oxidation Induced Ultra-Low Power Performance from A-Sinx:H Resistive Switching Memory
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)(2018)
Key words
plasma oxidation,high resistance states,low resistance states,resistive switching memory,ultralow power resistive switching performance,voltage 0.5 V,SiNx:H,Al-Si0.28N0.21O0.51:H-Si,Al-Si0.48N0.52:H-Si
AI Read Science
Must-Reading Tree
Example

Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined