Power P-GaN HEMT under Single and Multi-Pulse UIS Conditions
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)（2018）
Key words
power p-GaN HEMT,multipulse UIS conditions,Unclamped Inductive Switching measurements,p-GaN gates,GaN
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined