Statistical Simulation Study of Metal Grain-Orientation-Induced MS and MIS Contact Resistivity Variability for 7-Nm FinFETs
IEEE Transactions on Electron Devices（2018）
关键词
Fermi-level pinning (FLP),metal-interfacial layer-semiconductor (MIS) contact,metal work function variation,n-Ge,n-Si,specific contact resistivity
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