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Impact of Aggressive Fin Width Scaling on FinFET Device Characteristics

X. He,J. Fronheiser,P. Zhao,Z. Hu,S. Uppal, X. Wu,Y. Hu,R. Sporer,L. Qin,R. Krishnan,E. M. Bazizi,R. Carter,K. Tabakman,A. K. Jha,H. Yu,O. Hu,D. Choi, J. G. Lee,S. B. Samavedam,D. K. Sohn

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2017）

Cited 58|Views282
Key words
FinFET electrostatics,fin bottom punch-through,TCAD simulations DIBL,FinFET device,fin width scaling
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