Performance Benchmarking of P-Type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 Hetero-Junction Tunnel FETs
2016 IEEE International Electron Devices Meeting (IEDM)（2016）
Key words
p-channel TFET,PTFET performance benchmark,group IV semiconductor heterojunctions,group III-V semiconductor heterojunctions,gate stack engineering,extremely scaled dielectrics,accumulation capacitance density,temperature dependent I-V measurements,electric field dependent I-V measurements,first-principles density functional theory,first-principles DFT,band-structure calculations,analytical modeling,modified Shockley-Read-Hall formalism,carrier transport,band-to-band tunneling,trap-assisted tunneling,band-gap engineering,phonon assisted TAT current,heterojunction tunnel FET,In0.65Ga0.35As-GaAs0.4Sb0.6,Ge-Ge0.93Sn0.07
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