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Ultrathin Barrier Formation Using Combination of Manganese Oxide Encapsulation and Self-Aligned Copper Silicon Nitride Barriers for Copper Wiring in Future LSI Interconnects

Hiroshi Kudo,Masaki Haneda,Nobuyuki Ohtsuka,Takahiro Tabira,Michie Sunayama,Hirosato Ochimizu,Hisaya Sakai, Tamotsu Owada,Hideki Kitada,Yasuo Nara

IEEE Transactions on Electron Devices（2011）

Cited 13|Views2
Key words
Copper alloys,self-aligned barrier,semiconductor device reliability,wiring
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