Electron Mobility Enhancement in Solution-Processed Low-Voltage In2O3 Transistorsvia Channel Interface PlanarizationAlexander D. Mottram,Pichaya Pattanasattayavong,Ivan Isakov,Gwen Wyatt-Moon,Hendrik Faber,Yen-Hung Lin,Thomas D. AnthopoulosAIP ADVANCES(2018)引用 12|浏览23AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要