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A Novel Bit-Level Characterization Methodology to Benchmark the FinFET Based SRAM Performance under the Influence of Leakage Current

J. C. Liu,S. Mukhopadhyay,Y. F. Wang,Y. S. Tsai, S. C. Chen,J. H. Lee,Ryan Lu,Y-H. Lee,Jun He

2017 IEEE International Electron Devices Meeting (IEDM)（2017）

Cited 2|Views18
Key words
6-Transistor SRAM,FinFET,SRAM 6T circuit,PseudoLeakage current source
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