Analog ASIC TID Behavior in a Temperature Range

A. Y. Borisov, L. N. Kessarinsky, M. M. Vanzha,M. P. Belova,Y. M. Moskovskaya,D. V. Boychenko,A. Y. Nikiforov, V. V. Enns

2017 IEEE 30th International Conference on Microelectronics (MIEL)（2017）

引用 4|浏览9

关键词

temperature range,analog ASIC TID behavior,total ionizing dose effects,analog configurable application specific integrated circuits,programmable analog gate array,dominant failure mechanisms,potentially radiation sensitive internal units,minimal radiation hardness,temperature -60 C to 125 C

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要