A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs
IEEE Transactions on Microwave Theory and Techniques（2017）
Key words
AlGaN/GaN high-electron-mobility transistors (HEMT),scalable,self-heating,surface potential (SP),trapping effect
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined