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${Z}^{\textsf {2}}$ -FET As Capacitor-Less Edram Cell for High-Density Integration

Carlos Navarro,Meng Duan,Mukta Singh Parihar,Fikru Adamu-Lema,Stefan Coseman,Joris Lacord,Kyunghwa Lee,Carlos Sampedro,Binjie Cheng,Hassan El Dirani,Jean-Charles Barbe,Pascal Fonteneau,Seong-Il Kim,Sorin Cristoloveanu,Maryline Bawedin,Campbell Millar,Philippe Galy,Cyrille Le Royer,Siegfried Karg,Heike Riel,Paul Wells,Yong-Tae Kim,Asen Asenov,Francisco Gamiz

IEEE TRANSACTIONS ON ELECTRON DEVICES（2017）

Cited 31|Views89
Key words
1T-dynamic random access memory (DRAM),capacitor less,DRAM,embedded,fully depleted (FD),integration,low power,scaling,silicon on insulator (SOI) and Z(2)-FET
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