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Comparison of Key Fine-Line BEOL Metallization Schemes for Beyond 7 Nm Node

T. Nogami,X. Zhang,J. Kelly,B. Briggs,H. You,R. Patlolla,H. Huang,P. McLaughlin,J. Lee,H. Shobha,S. Nguyen, S. DeVries,J. Demarest,G. Lian,J. Li,J. Maniscalco,P. Bhosale,X. Lin,B. Peethala,N. Lanzillo,T. Kane,C. C. Yang,K. Motoyama,D. Sil,T. Spooner,D. Canaperi,T. Standaert,S. Lian,A. Grill,D. Edelstein,V. Paruchuri

2017 Symposium on VLSI Technology（2017）

Cited 33|Views59
Key words
EM reliability,barrier-less Co wires,barrier-less Ru wires,Cu fine wires,through-cobalt self-forming barrier,TaN-Ru barrier,line resistance,key fine-line BEOL metallization schemes,size 7 nm,TaN-Ru,Cu,Co
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