Quantitative Depth Profiling of Si1-Xgex Structures by Time-Of-Flight Secondary Ion Mass Spectrometry and Secondary Neutral Mass Spectrometry

M. N. Drozdov,Y. N. Drozdov,A. Csik,A. V. Novikov,K. Vad,P. A. Yunin,D. V. Yurasov,S. F. Belykh,G. P. Gololobov,D. V. Suvorov,A. Tolstogouzov

Thin Solid Films（2016）

Cited 9|Views14

Key words

Electron-gas secondary neutral mass spectrometry (SNMS),Mixing-roughness-information depth model (MRI),Reference samples,Si1-xGex structures,Sputter depth profiling,Time-of-flight secondary ion mass spectrometry (TOF-SIMS)

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