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Electron Mobility in Thin In0.53Ga0.47As Channel.

E. Cartier,A. Majumdar,K. -T. Lee,T. Ando,M. M. Frank,J. Rozen,K. A. Jenkins,C. Liang,C. -W. Cheng,J. Bruley,M. Hopstaken,P. Kerber,J. -B. Yau,X. Sun,R. T. Mo,C. -C. Yeh,E. Leobandung,V. Narayanan

2017 47th European Solid-State Device Research Conference (ESSDERC)（2017）

Cited 24|Views136
Key words
III-V FETs,In0.53Ga0.47As,channel thickness,electron mobility,charge trapping
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