Array Termination Impacts in Advanced SRAM

Randy W. Mann, Sandeep Puri,Sheng Xie,Daniel Marienfeld,Joseph Versaggi,Bianzhu Fu,Michael Gribelyuk, Ratheesh R. Thankalekshmi,Xiaoqiang Zhang,Hui Zang,Chad E. Weintraub

IEEE Transactions on Very Large Scale Integration (VLSI) Systems（2017）

Cited 4|Views52

Key words

Bit cell,local layout effect (LLE),static noise margin (SNM),static random access memory (SRAM),statistics,technology scaling,variation,write margin,yield

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