Contact Barrier Height and Resistivity Reduction Using Low Work-Function Metal (Yb)-Interfacial Layer-Semiconductor Contacts on N-Type Si and Ge
2015 73rd Annual Device Research Conference (DRC)（2015）
关键词
contact barrier height,resistivity reduction,low work function metal,interfacial layer semiconductor contacts,contact resistivity,metal-interfacial layer-semiconductor contacts,Yb-TiO2-Ge,Yb-TiO2-Si
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