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On a Feature of Temperature Dependence of Contact Resistivity for Ohmic Contacts to N-Si with an N + -N Doping Step

A. V. Sachenko,A. E. Belyaev,N. S. Boltovets,A. O. Vinogradov,V. A. Pilipenko,T. V. Petlitskaya,V. M. Anischik,R. V. Konakova, T. V. Korostinskaya,V. P. Kostylyov,Ya. Ya. Kudryk,V. G. Lyapin,P. N. Romanets,V. N. Sheremet

Semiconductor Physics Quantum Electronics & Optoelectronics（2014）

Cited 2|Views13
Key words
ohmic contact,metallization,doping step
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