Gettering Effect Of High-Dose Arsenic Implantation And Boron Diffusion On Gate Oxide Integrity In Trench Isolated High Voltage Silicon-On-Insulator Process
2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL（2005）
关键词
SOI,gettering,arsenic implantation,boron diffusion,HVIC
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