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A Subthreshold Slope and Low-Frequency Noise Characteristics in Charge Trap Flash Memories with Gate-All-Around and Planar Structure

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE(2012)

引用 9|浏览8
关键词
Subthreshold slope (SS),charge trap flash (CTF) memory,gate-all-around (GAA),low-frequency noise,interface trap (N-IT)
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