Method of fabricating a vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thicknessHerbert L Ho,Mahender Kumar, Qiqing Ouyang,Paul A Papworth,Christopher D Sheraw,Michael D Steigerwaltmag（2009）引用 26|浏览4AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
