Defect-induced Negative Differential Resistance of GaN Nanowires Measured by Conductive Atomic Force Microscopy
Applied physics letters（2009）
关键词
aluminium compounds,atomic force microscopy,chemical vapour deposition,crystal microstructure,electrical resistivity,gallium compounds,III-V semiconductors,nanofabrication,nanowires,semiconductor quantum wires,transmission electron microscopy,tunnelling,wide band gap semiconductors
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