Integrated Non-So2 Underlayer and Improved Line-Edge-roughness Dielectric Etch Process Using 193nm Bilayer ResistParijat Bhatnagar,Siddhartha Panda,Nikki L. Edleman,Scott D. Allen,Richard Wise,Arpan MahorowalaApplied Physics Letters（2006）引用 8|浏览19AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
