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Luminance and Current Distribution of Hybrid Circular GaN‐based Resonant‐cavity Light‐emitting Diodes with Lateral Current Injection on the N‐ and P‐side

Physica status solidi C, Conferences and critical reviews/Physica status solidi C, Current topics in solid state physics(2014)

Fraunhofer Inst Appl Solid State Phys

Cited 1|Views19
Abstract
Resonant-cavity light-emitting diodes emitting at around 400 nm based on an undoped bottom AlInN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/ZrO2 DBR with circular emitting apertures of diameters ranging from 5 to 200 mu m are demonstrated. The current distribution is investigated by luminance distribution imaging and three-dimensional device simulations for different current densities. The current distribution exhibits a maximum in the aperture centre or is homogeneous up to an aperture diameter of 50 mu m independent of the current density. A minimum occurs in the aperture centre for larger diameters increasing with increasing diameter and current density. The current distribution improves with larger n-GaN thickness and higher contact resistance between the transparent In2O3: Sn (ITO) electrode and the p-GaN contact layer. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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Key words
resonant-cavity light-emitting diode,AlInN,GaN,ITO,current distribution,lateral current injection
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