16.8 A/600 V Algan/Gan Mis-Hemts Employing Lpcvd-Si3n4 As Gate Insulator
ELECTRONICS LETTERS（2015）
关键词
aluminium compounds,chemical vapour deposition,gallium compounds,high electron mobility transistors,III-V semiconductors,MOSFET,semiconductor device breakdown,semiconductor growth,silicon compounds,wide band gap semiconductors
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