Statistical Measurement of Random Telegraph Noise and Its Impact in Scaled-Down High-Κ/metal-gate MOSFETs

H. Miki, N. Tega,M. Yamaoka,D. J. Frank,A. Bansal, M. Kobayashi, K. Cheng,C. P. D'Emic,Z. Ren,S. Wu,J-B. Yau, Y. Zhu,M. A. Guillorn,D. -G. Park,W. Haensch,E. Leobandung,K. Torii

2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2012）

Cited 69|Views57

Key words

MOSFET,SRAM chips,circuit stability,random noise,semiconductor device measurement,semiconductor device noise,statistical analysis,SRAM array,highly scaled HKMG MOSFET,highly scaled-down high-κ-metal-gate MOSFET,hysteretic behavior,logic delay uncertainty,multiple-trap RTN extraction,operational stability,random telegraph noise,short-term BTI,statistical measurement analysis,undoped channel

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