Electrical Properties of a Single P-Type ZnO Nanowire by Ga Implantation with FIB
Nanoelectronics Conference（2011）
Key words
III-V semiconductors,electric resistance measurement,field effect transistors,focused ion beam technology,gallium,nanowires,scanning electron microscopes,zinc compounds,FIB,Ga,ZnO,electrical activation energy,electrical properties,field effect transistor device,focused-ion-beam,hole carriers,ohmic contact behavior,resistance measurements,scanning-electron-microscope,single p-type nanowire,thermal activation,Focus Ion Beam,Ga-doped ZnO,electrical property
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