Orthotropic stress field induced by TSV and its impact on device performance
Interconnect Technology Conference and 2011 Materials for Advanced Metallization（2011）
关键词
copper,finite element analysis,silicon,stacking,three-dimensional integrated circuits,3d silicon stacking,cu,cu-filled tsv,fem model,si,device performance,microraman measured data,nominal silicon substrate,orthotropic elastic behavior,orthotropic pattern,orthotropic stress field,annealing,stress
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