Highly Reliable ReRAM Technology with Encapsulation Process for 20nm and Beyond

Dong-Jun Seong,Min Kyu Yang,Hyunsu Ju,Jung Moo Lee,Eunmi Kim,Seungjae Jung, Jinwoo Lee,Gun Hwan Kim,Seol Choi,Lijie Zhang,Seong-Geon Park,Youn Seon Kang,In-Gyu Baek,Jungdal Choi,Ho-Kyu Kang,Eunseung Jung

2013 5TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW)（2013）

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关键词

encapsulation,integrated circuit reliability,random-access storage,silicon compounds,ReRAM cell performance,ReRAM technology,SiN,SiN capping layer,encapsulation process,oxygen barrier encapsulation,process optimization,reliability,scaled technology node,size 20 nm

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