A 600V Super Low Loss IGBT with Advanced Micro-P Structure for the Next Generation IPM
International Symposium on Power Semiconductor Devices and IC's（2010）
关键词
capacitance,insulated gate bipolar transistors,overcurrent protection,collector-emitter saturation voltage,intelligent power module,low Miller capacitance,low on-state voltage drop,micro p-base structure,next generation IPM,over-current protection function,radiation noise,safe operating area,super low loss IGBT,trench-gate field stop IGBT,turn-off power dissipation,voltage 600 V
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