Impact of Intra-Die Thermal Variation on Accurate MOSFET Gate-Length Measurement
2009 IEEE/SEMI Advanced Semiconductor Manufacturing Conference（2009）
Key words
MOSFET,rapid thermal annealing,semiconductor device measurement,thermal analysis,MOSFET gate-length measurement,capacitive technique,electrical measurement,intradie thermal variation,local pattern density,long-wide plate gate capacitor,long-wide poly-silicon resistor,rapid thermal anneal condition
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