Impact of Substrate Bias on GIDL for Thin-Box ETSOI Devices
Simulation of Semiconductor Processes and Devices（2011）
关键词
inversion layers,semiconductor doping,silicon-on-insulator,thin film transistors,BOX thickness,GIDL,PDSOI device,doping,gate induced drain leakage,inversion layer thicknesses,partially depleted SOI,size 1.1 nm to 1.3 nm,size 10 nm to 50 nm,substrate bias impact,thin buried oxide device,thin-BOX ETSOI device,thin-BOX extremely thin silicon-on-insulator device,GIDL,Thin-BOX ETSOI,UTBB,back bias,electric field,fully depleted,partially depleted,substrate bias
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要