Investigation of Gidl Current Injection Disturb Mechanism in Two-Transistor-Envm Memory Devices
2008 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT（2008）
关键词
field programmable gate arrays,flash memories,FPGA,GIDL current Injection disturb mechanism,S-D junction profiles,eFlash 2TC,flash based field programmable gate array,flash memory,flash p-well bias,gate induced drain leakage,program Vt window,selected gate,two transistor cell,two-transistor-eNVM memory devices,uniform channel program and erase
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要