Cd-Sem Metrology Evaluation of Gate-All-Around Si Nanowire Mosfet with Improved Control of Nanowire Suspension by Using A Buried Boron Nitride Etch-Stop Layer
2014 25TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC)（2014）
关键词
Gate-all-around (GAA) nanowire MOSFETs SOI,Boron Nitride,3D-CDSEM
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