Optimization of Epitaxial Growth for Thick Ge-on-Si Structures Used for Single Photon Avalanche Diode Applications
2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM)（2014）
Key words
avalanche photodiodes,chemical vapour deposition,elemental semiconductors,germanium,semiconductor epitaxial layers,semiconductor growth,silicon,vapour phase epitaxial growth,Ge-Si,RP-CVD,crystallinity,device incorporation,doping profiles,epitaxial growth,optimization,single photon avalanche diode applications,smooth surface,thick Ge-on-Si structures,threading dislocation density
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