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Electrical Characteristics of Silicon Pixel Detectors

I Gorelov,G Gorfine,M Hoeferkamp,V Mata-Bruni,G Santistevan,SC Seidel,A Ciocio,K Einsweiler,J Emes,M Gilchriese,A Joshi,S Kleinfelder,R Marchesini,F McCormack,O Milgrome,N Palaio,F Pengg,J Richardson,G Zizka,M Ackers,G Comes,P Fischer,M Keil,G Martinez,I Peric,O Runolfsson,T Stockmanns,J Treis,N Wermes,C Gossling,F Hugging,J Klaiber-Lodewigs,O Krasel,J Wustenfeld,R Wunstorf,D Barberis,R Beccherle,C Caso,M Cervetto,G Darbo,G Gagliardi,C Gemme,P Morettini,P Netchaeva,B Osculati,L Rossi,E Charles,D Fasching,L Blanquart,P Breugnon,D Calvet,JC Clemens,P Delpierre,G Hallewell,D Laugier,T Mouthuy,A Rozanov,I Valin,A Andreazza,M Caccia,M Citterio,T Lari,C Meroni,F Ragusa,C Troncon,G Vegni,G Lutz,RH Richter,T Rohe,GR Boyd,PL Skubic,P Sicho,L Tomasek,V Vrba,M Holder,M Ziolkowski,D Cauz,M Cobal-Grassmann,S D'Auria,B De Lotto,C del Papa,H Grassmann,L Santi,KH Becks,G Lenzen,C Linder

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment（2002）

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关键词
silicon,pixel,semiconductor,tracking
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