订阅小程序
旧版功能

Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors

B. H. Hong,L. Choi,Y. C. Jung,S. W. Hwang,K. H. Cho,K. H. Yeo,D. -W. Kim,G. Y. Jin,D. Park,S. H. Song,Y. Y. Lee,M. H. Son,D. Ahn

IEEE Transactions on Nanotechnology（2010）

引用 16|浏览0
关键词
Gate all around (GAA),random telegraph noise (RTN),silicon nanowire FET (SNWFET),temperature dependence
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要