Yongkui Zhang

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论文共 62 篇作者统计合作学者相似作者

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Impact of Gate Length on the Electrical Characteristics of Junctionless FDSOI Strained SiGe Channel P-Finfet

Hongxiao Lin, Yuanhao Miao, Yuhui Ren,Yongkui Zhang,Qingzhu Zhang, Wenjuan Xiong, Jiahan Yu, Xuewei Zhao,Renrong Liang,Jun Xu,Tianchun Ye,Henry H. Radamson

Journal of Materials Science Materials in Electronicsno. 15 (2025): 1-15

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GIDL Analysis of Novel 4F2 VCT Architecture Using TCAD Simulations

Yi Ling, Haochang Lyu, Bowen Dong, Xinhe Wang, Gengfei Li,Yongkui Zhang,Guilei Wang,Chao Zhao

2025 Conference of Science and Technology of Integrated Circuits (CSTIC)pp.1-3, (2025)

引用0浏览0EIWOS引用

CMOS Scaling for the 5 Nm Node and Beyond: Device, Process and Technology

Henry H. Radamson,Yuanhao Miao,Ziwei Zhou,Zhenhua Wu,Zhenzhen Kong,Jianfeng Gao,Hong Yang,Yuhui Ren,Yongkui Zhang,Jiangliu Shi,Jinjuan Xiang,Hushan Cui, Bin Lu,Junjie Li,Jinbiao Liu,Hongxiao Lin,Haoqing Xu, Mengfan Li, Jiaji Cao, Chuangqi He, Xiangyan Duan,Xuewei Zhao,Jiale Su,Yong Du,Jiahan Yu,Yuanyuan Wu,Miao Jiang,Di Liang,Ben Li,Yan Dong,Guilei Wang

Nanomaterialsno. 10 (2024): 837-837

引用14浏览0WOS引用

A Common Source 3D FeFET with Disturb Inhibition Program and Erase Method

Zijin Yan,Huilong Zhu,Weixing Huang,Hong Yang,Qi Wang,Shunshun Lu, Shuai Yang,Junjie Li,Na Zhou,Yue Zhang,Yunfei Shi, Liang Xiang,Wenliang Liu,Binghui Wang,Yongkui Zhang,Junfeng Li,Jun Luo,T. C. Ye

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY（2024）

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A Study on the Channel Holes’ Diameter Effects of High-Performance Vertical-Channel Flash Memory Cells

Zijin Yan,Huilong Zhu,Hong Yang,Junjie Li,Shunshun Lu,Chenchen Zhang, Shuai Yang, Tianyu Bai,Kaiqiang Zhao, Liang Xiang,Yongkui Zhang,Junfeng Li,Jun Luo,T. C. Ye

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYno. 10 (2024)

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High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Hongxiao Lin,Xing Zhao,Xue Luo,Yuanhao Miao,Yongkui Zhang,Zhenzhen Kong,Guilei Wang,Hong Yang,Zhenhua Wu,Yunfei Shi, Bin Lu,Linpeng Dong,Wenjuan Xiong,Renrong Liang,Jun Xu,Xuewei Zhao,Tianchun Ye,Henry H. Radamson

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)

引用4浏览0引用

Improved Positive Bias Temperature Instability of N-Type Vertical C-Shaped-Channel Nanosheet FET by Forming Gas Annealing

Yunfei Shi, Songyi Jiang,Hong Yang,Yongkui Zhang,Longda Zhou,Zhigang Ji,Qianqian Liu,Qi Wang,Huilong Zhu,Jun Luo,Wenwu Wang

2024 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS, IPFA 2024 (2024)

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New Structure Transistors for Advanced Technology Node CMOS ICs

Qingzhu Zhang,Yongkui Zhang,Yanna Luo,Huaxiang Yin

National Science Reviewno. 3 (2024)

引用18浏览0WOS引用

First Demonstration of Vertical Sandwich GAA TFETs with Self-Aligned High-k Metal Gates and Abrupt Doping Tunneling Junctions

Yongkui Zhang,Yangyang Li,Huilong Zhu, Qi Wang,Yong Du,Shunshun Lu,Junjie Li,Zhenzhen Kong, Xiaobin He,Jinbiao Liu,Chen Li,Weixing Huang,Lu Xie,Zhongrui Xiao,Gaobo Xu,Guilei Wang,Chao Zhao,Jun Luo

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYno. 7 (2023)

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Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

Zhuo Chen,Huilong Zhu,Guilei Wang, Qi Wang,Zhongrui Xiao,Yongkui Zhang,Jinbiao Liu,Shunshun Lu,Yong Du,Jiahan Yu,Wenjuan Xiong,Zhenzhen Kong,Anyan Du,Zijin Yan,Yantong Zheng

NANOMATERIALSno. 11 (2023)

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