In his early career, he pioneered work on developing free standing GaN substrates by hydride vapor phase epitaxy technique, and for the past 3 decades, he has been working on the metal-organic chemical vapor deposition (MOCVD) based III-N semiconductor epitaxy and device technologies.

His research interest is focused on III-N and III-AsPSb based epitaxy, and fabrication technologies for optoelectronic and power device applications. He serves as a co-PI or task leader for projects supported by federal sponsors such as the Defense Advanced Research Projects Agency (DARPA), Department of Energy (DOE), Army Research Office (ARO), Naval Research Lab (NRL), National Science Foundation (NSF), and Department of Defense (DOD); as well as industrial companies such as Applied Materials and Keysight Technologies. He and his colleagues have contributed more than 140 papers in peer-review journals with h-index of 42 as well as more than 350 conference presentations, including 51 invited talks.