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Papers共 57 篇Author StatisticsCo-AuthorSimilar Experts

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Enhanced Memory Performance in Ferroelectric NAND Applications: the Role of Tunnel Dielectric Position for Robust 10-Year Retention
Prasanna Venkatesan,Andrea Padovani, Lance Fernandes, Priyankka Ravikumar,Chinsung Park, Huy Tran, Zekai Wang, Hari Jayasankar, Amrit Garlapati, Taeyoung Song, Hang Chen,Winston Chern, Zheng Wang, Kijoon Kim, Jongho Woog,Suhwan Lim, Kwangsoo Kim, Wanki Kim,Daewon Ha,Shimeng Yu, Suman Dattal,Luca Larcher,Gaurav Thareja, Asif Khanl
2025 IEEE International Reliability Physics Symposium (IRPS)pp.1-7, (2025)
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The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications
Hyojun Choi,Giuk Kim,Hunbeom Shin, Yunseok Nam,Sanghun Jeon, Kwangsoo Kim,Suhwan Lim, Jongho Woo, Wanki Kim,Daewon Ha,Jinho Ahn
2025 IEEE International Reliability Physics Symposium (IRPS)pp.1-6, (2025)
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Elucidating the Role of Ferroelectric in Memory Window Expansion of Ferroelectric FETs with Gate-Side Injection
Yixin Qin, Saikat Chakraborty, Zijian Zhao, Sizhe Ma, Moonyoung Jung, Kijoon Kim,Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim,Daewon Ha,Xiao Gong,Vijaykrishnan Narayanan, Jaydeep P. Kulkarni,Kai Ni
IEEE Transactions on Electron Devices（2025）
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Modeling Dynamic Interplay Between Charge Traps and Polarization for Memory Window Enhancement in Gate Injection Layers
Minji Shon,Chinsung Park, Prasanna Venkatesan Ravindran, Lance Fernandes, Kijoon Kim, Jongho Woo,Suhwan Lim, Kwangsoo Kim, Wanki Kim,Daewon Ha,Suman Datta,Asif Khan,Shimeng Yu
2025 IEEE International Reliability Physics Symposium (IRPS)pp.1-5, (2025)
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Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection
Sizhe Ma, Saikat Chakraborty, Yixin Qin, Zijian Zhao, Jiahui Duan, Moonyoung Jung, Kijoon Kim,Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim,Daewon Ha,Vijaykrishnan Narayanan, Jaydeep P. Kulkarni,Kai Ni
2025 IEEE International Reliability Physics Symposium (IRPS)pp.01-06, (2025)
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Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage
Yixin Qin, Saikat Chakraborty, Zijian Zhao, Sizhe Ma, Moonyoung Jung, Kijoon Kim,Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim,Daewon Ha,Vijaykrishnan Narayanan, Jaydeep P. Kulkarni,Kai Ni
2025 IEEE International Reliability Physics Symposium (IRPS)pp.01-06, (2025)
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Synaptic Weight Cell Enabled by Ferroelectric FETs with Gate Side Charge Injection
Qi Zheng, Yixin Qin,Suhwan Lim, Kijoon Kim, Kwangsoo Kim, Wanki Kim,Daewon Ha,Abhronil Sengupta,Shimeng Yu,Vijaykrishnan Narayanan,Kai Ni
IEEE Electron Device Lettersno. 99 (2025): 1-1
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Author Statistics

#Papers: 57

#Citation: 679

H-Index: 14

G-Index: 25

Sociability: 5

Diversity: 2

Activity: 8

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