Scientific activity:
1980-1994: X-ray Diffraction (XRD) examinations of defects in GaAs, InP and GaN semiconductors. The main results of that period: i) observation of metastability of EL2-like defects (Ga-antisite in complex defect) induced by temperature and illumination, ii) determination of lattice parameters of GaAs and GaN as a function of doping.
1995-2000: creation of the epitaxy (metalorganic chemical vapour phase epitaxy-MOVPE) laboratory in Unipress,
2000- up to now: examinations of microstructural properties of AlGaInN layers and quantum structures as a function of MOVPE growth conditions and relating these properties to the optical and electrical parameters which are important for functioning of nitride laser diodes (UV/blue/green) and transistors.