Raphael Clerc

Raphaël Clerc was born in Thionville, France in 1975. He received a M. S. degree in Physics and Engineering from the Physics department of Grenoble Institute of Technology (INPG) in Grenoble in 1998, and a Ph. D. degree in electrical engineering from the same university in 2001. His Ph.D. deals with the modeling and the electrical characterization of CMOS transistors with ultra thin oxide. During 2001-2002, he joined the University of Udine (Italy) as a post doc student, working on Monte Carlo device simulation. He became associate professor at Grenoble Institute of Technology in 2002 - 2012, teaching physics, optics and semiconductor devices and technology. He is now Full Professor at Hubert Curien Laboratory, Institut d’Optique Graduate School and Jean Monnet University, Saint-Etienne. His field of experience covers the area of modeling, simulation and characterization of advanced silicon devices and organic devices and more specifically quantum effects, transport in the quasi ballistic regime, Monte Carlo Simulations, transport in dielectrics and amorphous material, compact modeling, electrical characterization and parameter extraction. His current research interests are now on the modeling of optical propagation in complex medium (paper, skin …) as well as optoelectronics devices (organic photodiodes, solar cells, silicon photonics, silicon SPAD). Prof. Clerc is the author or co-author of more than 100 publications in internationals journals and conferences (including 15 invited papers). He has been a member of the ESSDERC technical committee (2005 -2010), IEDM CMOS device committee (2007-2008) and modeling (2017-2018), IWCE (2009), ICOE (2012). He is regularly invited as reviewer of Semiconductor Science and Technology, Solid State Electronics, Transaction on Electron Device and Electron Device Letters, Organic Electronics, Advanced Optical Material, Advanced Electronical Materials journals.