Valery V. Preobrazhenskii - Institute of Semiconductor Physics of the Siberian Branch, the Russian Academy of Sciences

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Bio

Andrey V. Vasev is a Research Scientist in the Laboratory of physical basis of epitaxy of semiconductor heterostructures in the A.V. Rzhanov Institute of Semiconductor Physics SB RAS. He earned his Master’s degree of physics at Novosibirsk State University in 1998 and his Ph.D. in physics of semiconductors at the A.V. Rzhanov ISP SB RAS in 2010. Now he is Senior Researcher of Laboratory of physical basis of epitaxy of semiconductor heterostructures His research interests include the RHEED and Ellipsometric investigation of processes occurring on semiconductors surface.

Research Interests

Papers共 249 篇Author StatisticsCo-AuthorSimilar Experts

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Детекторы Одиночных Фотонов И Их Применение В Квантовых Коммуникациях

И. И. Рябцев,В. В. Преображенский,И. Б. Чистохин,М. А. Путято, М. С. Аксенов,Е. А. Емельянов,М. О. Петрушков,Д. Б. Третьяков,А. С. Плешков,А. В. Коляко,В. М. Энтин,И. Г. Неизвестный

XI Международный семинар по волоконным лазерам (2024)

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Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs

L. A. Snigirev,N. A. Bert,V. V. Preobrazhenskii,M. A. Putyato,B. R. Semyagin,V. V. Chaldyshev

Semiconductorsno. 3 (2024): 273-278

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Photon Detectors and Emitters for Quantum Communication Systems and Quantum Frequency Standards

V. V. Preobrazhenskii,I. B. Chistokhin,I. I. Ryabtsev,V. A. Haisler,A. I. Toropov

Bulletin of the Russian Academy of Sciences Physics（2024）

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Raman Scattering Spectroscopy and Photoluminescence of GaAs Nanowires

I. V. Kalachev,I. A. Milekhin,E. A. Emel’yanov,V. V. Preobrazhenskii, V. S. Tumashev,A. G. Milekhin,A. V. Latyshev

Optoelectronics, Instrumentation and Data Processingno. 6 (2024): 659-666

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Локальный Спектральный Анализ Полупроводниковых Наноструктур Для Устройств Фотоники

А Милёхин,И. А. Милехин, Н Курусь,Л.С. Басалаева, Р Васильев,К Аникин, В.Г. Мансуров, К.С. Журавлев,Е.А. Емельянов,В. В. Преображенский,А Латышев,Dietrich R. T. Zahn, Институт Физики, С Ржанова, Российская Федерация

openalex（2023）

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Молекулярно-лучевая Эпитаксия Твердого Раствора GaP-=SUB=-x-=/SUB=-As-=SUB=-1-x-=/SUB=-: Феноменологическое Описание Зависимости X От Условий Роста На Подложке GaAs(001)

М.А. Путято,Е.А. Емельянов,М.О. Петрушков,А.В. Васев, Б.Р. Cемягин,В.В. Преображенский

Физика и техника полупроводниковno. 2 (2023)

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Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots

Demid S. Abramkin,Mikhail O. Petrushkov, Dmitrii B. Bogomolov,Eugeny A. Emelyanov,Mikhail Yu. Yesin,Andrey V. Vasev,Alexey A. Bloshkin, Eugeny S. Koptev,Mikhail A. Putyato,Victor V. Atuchin,Valery V. Preobrazhenskii

NANOMATERIALSno. 5 (2023)

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Arrays of Quasi-One-Dimensional GaAs Nanocrystals Grown on the Oxidized Surface of the Si/GaAs(001) Heterostructure: Effect of the Si Epitaxial Layer on the Array Structure

Emelyanov E. A., Del’ T. A.,Petrushkov M. O.,Nastovjak A. G.,Spirina A. A.,Gavrilova T. A.,Semyagin B. R.,Vasev A. V.,Putyato M. A.,Preobrazhenskii V. V.

Technical Physics Lettersno. 2 (2023)

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Structure and Optical Properties of a Composite AsSb–Al0.6Ga0.4As0.97Sb0.03 Metamaterial

L. A. Snigirev,V. I. Ushanov,A. A. Ivanov,N. A. Bert,D. A. Kirilenko,M. A. Yagovkina,V. V. Preobrazhenskii,M. A. Putyato, B. P. Semyagin,I. A. Kasatkin,V. V. Chaldyshev

Semiconductorsno. 13 (2023): 615-620

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Структура И Оптические Свойства Композитного Метаматериала AsSb-Al-=SUB=-0.6-=/SUB=-Ga-=SUB=-0.4-=/SUB=-As-=SUB=-0.97-=/SUB=-Sb-=SUB=-0.03-=/SUB=-

Л.А. Снигирев,В.И. Ушанов,А.А. Иванов,Н.А. Берт,Д.А. Кириленко,М.А. Яговкина,В.В. Преображенский,М.А. Путято,Б.Р. Семягин,И.А. Касаткин,В.В. Чалдышев

Физика и техника полупроводниковno. 1 (2023)

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